We are the Polish company Tara, we offer silicon ingots and plates from Ukraine
Silicon ingots
semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year.
Basic parameters of silicon ingots for semiconductor application:
Growth metod CZ
Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter from 2″ – to 8″
Orientation
(100) or (111) or (110)
Resistivity
0,001 – 140 Ohm*cm
Oxygen content
<10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special
Carbon content
<10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special
Dislocation density
<10cm-2
Silicon plates
semiconductor grade silicon plates with diameter from 2” up to 6” in quantity up to 500 000pcs per year.
Also we have possibility to produce polished wafers with square and pseudosquare shape in accordance to customer’s specification.
Our basic plates parameters meet SEMI M1-00 standard.
Basic parameters of semiconductor grade silicon plates
Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter 2″, 3″, 4″, 5″, 6″
Diameter tolerance minimum ±0,3 mm standard ±0,5 mm
Orientation )
Resistivity 0,001 – 140 Ohm*cm
Total thickness variation
for diameter 2″
for diameter 3″
for diameter 4″
for diameter 5″
for diameter 6″
Minimum:
5 microns
5 microns
5 microns
8 microns
15 microns
Standard:
10 microns
10 microns
15 microns
15 microns
20 microns
Bow
for diameter 2″
for diameter 3″
for diameter 4″
for diameter 5″
for diameter 6″
Minimum:
20 microns
25 microns
30 microns
35 microns
50 microns
Standard:
25 microns
30 microns
35 microns
40 microns
60 microns
Surface As-cut, lapped, etched, one side and double side polished
Oxygen content <10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special
Carbon content <10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special
Sincerely,
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LTD."TARA"